TSV 3D RF Integration by Shenglin Ma & Yufeng Jin

TSV 3D RF Integration

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  • Genre Engineering
  • Publisher Elsevier
  • Released
  • Size 85.72 MB
  • Length 294 Pages

Description

TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.
A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.

- Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology
- Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods
- Offers a systematic and comparative literature review of HR-Si interposer technology by topic
- Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems
- Gives a systematic and accessible accounting on this leading technology

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